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PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 01 -- 11 May 2005 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: PBSS9110X.
1.2 Features
s s s s SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High efficiency leading to less heat generation
1.3 Applications
s Major application segments: x Automotive 42 V power x Telecom infrastructure x Industrial s Peripheral driver: x Driver in low supply voltage applications (e.g. lamps and LEDs) x Inductive load driver (e.g. relays, buzzers and motors) s DC-to-DC converter
1.4 Quick reference data
Table 1: VCEO IC ICM RCEsat
[1]
Quick reference data Conditions open base single pulse; tp 1 ms IC = 1 A; IB = 100 mA
[1]
Symbol Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance
Min -
Typ 165
Max 100 1 3 200
Unit V A A m
Pulse test: tp 300 s; 0.02.
Philips Semiconductors
PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2: Pin 1 2 3 Pinning Description emitter collector base
3 2 1
3 1
sym042
Simplified outline
Symbol
2
3. Ordering information
Table 3: Ordering information Package Name PBSS8110X SC-62 Description plastic surface mounted package; collector pad for good heat transfer; 3 leads Version SOT89 Type number
4. Marking
Table 4: Marking codes Marking code [1] *4B Type number PBSS8110X
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
9397 750 14956
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 11 May 2005
2 of 15
Philips Semiconductors
PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation Tamb 25 C
[1] [2] [3]
Conditions open emitter open base open collector single pulse; tp 1 ms
Min -65 -65
Max 120 100 5 1 3 300 0.55 1.4 2.0 150 +150 +150
Unit V V V A A mA W W W C C C
Tj Tamb Tstg
[1] [2] [3]
junction temperature ambient temperature storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint.
2.0 Ptot (W) 1.6
006aaa408
(1)
(2)
1.2
0.8
(3)
0.4
0 0 40 80 120 160 Tamb (C)
(1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB; mounting pad for collector 6 cm2 (3) FR4 PCB; standard footprint
Fig 1. Power derating curves
9397 750 14956
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 11 May 2005
3 of 15
Philips Semiconductors
PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1] [2] [3]
Min -
Typ -
Max 227 89 63 16
Unit K/W K/W K/W K/W
Rth(j-sp)
[1] [2] [3]
thermal resistance from junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint.
103 Zth(j-a) (K/W) duty cycle = 1 0.75 2 10 0.5 0.33 0.2 0.1 0.05 0.02 0.01 1 0
006aaa409
10
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 t p (s)
103
FR4 PCB; standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14956
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 11 May 2005
4 of 15
Philips Semiconductors
PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 1 0.01 0
006aaa411
10
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 t p (s)
103
FR4 PCB; mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
102 Zth(j-a) (K/W)
006aaa410
duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02
10
1
0.01 0
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 t p (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14956
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 11 May 2005
5 of 15
Philips Semiconductors
PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7: Characteristics Tamb = 25 C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain Conditions VCB = 80 V; IE = 0 A VCB = 80 V; IE = 0 A; Tj = 150 C VCE = 80 V; VBE = 0 V VEB = 4 V; IC = 0 A VCE = 10 V; IC = 1 mA VCE = 10 V; IC = 250 mA VCE = 10 V; IC = 500 mA VCE = 10 V; IC = 1 A VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 10 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA RCEsat VBEsat VBEon td tr ton ts tf toff fT Cc collector-emitter saturation resistance base-emitter saturation voltage base-emitter turn-on voltage delay time rise time turn-on time storage time fall time turn-off time transition frequency collector capacitance
Pulse test: tp 300 s; 0.02.
[1] [1] [1] [1]
Min 150 150 100 80 -
Typ 165 25 220 245 365 185 550 -
Max 100 50 100 100 500 40 120 200 200 1.05 0.9 7.5
Unit nA A nA nA
ICES IEBO hFE
mV mV mV m V V ns ns ns ns ns ns MHz pF
IC = 1 A; IB = 100 mA IC = 1 A; IB = 100 mA VCE = 10 V; IC = 1 A VCC = 10 V; IC = 0.5 A; IBon = 0.025 A; IBoff = -0.025 A
VCE = 10 V; IC = 50 mA; f = 100 MHz VCB = 10 V; IE = ie = 0 A; f = 1 MHz
100 -
[1]
9397 750 14956
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 11 May 2005
6 of 15
Philips Semiconductors
PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
600 hFE
001aaa497
1000 VBE (mV)
(1)
001aaa495
800 400
(1) (2) (2)
600
(3)
200
(3)
400
0 10-1
1
10
102
103 104 IC (mA)
200 10-1
1
10
102
103 104 IC (mA)
VCE = 10 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
VCE = 10 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
Fig 5. DC current gain as a function of collector current; typical values
103
001aaa504
Fig 6. Base-emitter voltage as a function of collector current; typical values
103
001aaa505
VCEsat (mV)
VCEsat (mV)
102
102
(1) (2) (3)
10 10-1
1
10
102
103 104 IC (mA)
10 10-1
1
10
102
103 104 IC (mA)
IC/IB = 10 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
IC/IB = 20; Tamb = 25 C
Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values
Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values
9397 750 14956
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 11 May 2005
7 of 15
Philips Semiconductors
PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
104 VCEsat (mV) 103
001aaa506
1200 VBEsat (mV) 1000
(1)
001aaa498
800
(2) (3)
600 102 400
10 10-1
1
10
102
103 104 IC (mA)
200 10-1
1
10
102
103 104 IC (mA)
IC/IB = 50; Tamb = 25 C
IC/IB = 10 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values
1200 VBEsat (mV) 1000
001aaa499
Fig 10. Base-emitter saturation voltage as a function of collector current; typical values
103 RCEsat () 102
001aaa501
800
10
600
1
(1) (2) (3)
400 10-1
1
10
102
103 104 IC (mA)
10-1 10-1
1
10
102
103 104 IC (mA)
IC/IB = 20; Tamb = 25 C
IC/IB = 10 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 11. Base-emitter saturation voltage as a function of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values
9397 750 14956
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 11 May 2005
8 of 15
Philips Semiconductors
PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
103 RCEsat () 102
001aaa502
103 RCEsat () 102
001aaa503
10
10
1
1
10-1 10-1
1
10
102
103 104 IC (mA)
10-1 10-1
1
10
102
103 104 IC (mA)
IC/IB = 20; Tamb = 25 C
IC/IB = 50; Tamb = 25 C
Fig 13. Collector-emitter saturation resistance as a function of collector current; typical values
2 IC (A) 1.6
(1) (2) (3) (4) (5) (6) (7) (8)
Fig 14. Collector-emitter saturation resistance as a function of collector current; typical values
001aaa496
1.2
0.8
(9) (10)
0.4
0 0 1 2 3 4 VCE (V) 5
Tamb = 25 C (1) IB = 35 mA (2) IB = 31.5 mA (3) IB = 28 mA (4) IB = 24.5 mA (5) IB = 21 mA (6) IB = 17.5 mA (7) IB = 14 mA (8) IB = 10.5 mA (9) IB = 7 mA (10) IB = 3.5 mA
Fig 15. Collector current as a function of collector-emitter voltage; typical values
9397 750 14956
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 11 May 2005
9 of 15
Philips Semiconductors
PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
8. Test information
IB 90 % input pulse (idealized waveform) IBon (100 %)
10 %
IBoff
IC 90 %
output pulse (idealized waveform)
IC (100 %)
10 % t td ton tr ts toff tf
006aaa003
Fig 16. BISS transistor switching time definition
VBB VCC
RB (probe) oscilloscope 450 VI R1 R2
RC Vo (probe) 450 DUT oscilloscope
mlb826
VCC = 10 V; IC = 0.5 A; IBon = 0.025 A; IBoff = -0.025 A
Fig 17. Test circuit for switching times
9397 750 14956
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 11 May 2005
10 of 15
Philips Semiconductors
PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
9. Package outline
4.6 4.4 1.8 1.4
1.6 1.4
2.6 2.4
4.25 3.75 1.2 0.8 0.48 0.35 3 0.44 0.23 04-08-03
1 0.53 0.40 1.5 Dimensions in mm
2
3
Fig 18. Package outline SOT89 (SC-62/TO-243)
10. Packing information
Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PBSS8110X
[1]
Package SOT89
Description 8 mm pitch, 12 mm tape and reel
Packing quantity 1000 -115 4000 -135
For further information and the availability of packing methods, see Section 18.
9397 750 14956
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 11 May 2005
11 of 15
Philips Semiconductors
PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
11. Soldering
4.75 2.25 2.00 1.90 1.20 solder lands 0.85 0.20 solder resist occupied area 1.20 4.60 0.50 1.20 1.20 1.70 solder paste 4.85
1.00 (3x)
3
2
1
msa442
0.60 (3x) 0.70 (3x) 3.70 3.95
Reflow soldering is the only recommended soldering method. Dimensions in mm
Fig 19. Reflow soldering footprint SOT89 (SC-62/TO-243)
12. Mounting
32 mm 32 mm 30 mm
40 mm
2.5 mm 1 mm 3 mm 2.5 mm 1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm
001aaa234
40 mm 2.5 mm 1 mm 0.5 mm
20 mm
5 mm 3.96 mm 1.6 mm
001aaa235
Fig 20. FR4 PCB, standard footprint
Fig 21. FR4 PCB, mounting pad for collector 6 cm2
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
9397 750 14956
Product data sheet
Rev. 01 -- 11 May 2005
12 of 15
Philips Semiconductors
PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
13. Revision history
Table 9: Revision history Release date 20050511 Data sheet status Product data sheet Change notice Doc. number 9397 750 14956 Supersedes Document ID PBSS8110X_1
9397 750 14956
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 11 May 2005
13 of 15
Philips Semiconductors
PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
14. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
15. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
17. Trademarks
Notice -- All referenced brands, product names, service names and trademarks are the property of their respective owners.
16. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
18. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14956
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 11 May 2005
14 of 15
Philips Semiconductors
PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
19. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information . . . . . . . . . . . . . . . . . . . . 14
(c) Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 11 May 2005 Document number: 9397 750 14956
Published in The Netherlands

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